PHYSICAL OPERATION OF BACK-SURFACE-FIELD SILICON SOLAR CELLS.FOSSUM JG.1977; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 4; PP. 322-325; BIBL. 10 REF.Article

A BIPOLAR DEVICE MODELING TECHNIQUE APPLICABLE TO COMPUTER-AIDED CIRCUIT ANALYSIS AND DESIGNFOSSUM JG.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 6; PP. 582-593; BIBL. 19 REF.Serial Issue

COMPUTER-AIDED NUMERICAL ANALYSIS OF SILICON SOLAR CELLS. = ANALYSE NUMERIQUE SUR ORDINATEUR DE CELLULES SOLAIRES AU SILICIUMFOSSUM JG.1976; SOLID. STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 4; PP. 269-277; BIBL. 16 REF.Article

A NEW APPROACH TO BIPOLAR DEVICE MODELING FOR CADFOSSUM JG.1972; PROC. I.E.E.E.; U.S.A.; DA. 1972; VOL. 60; NO 6; PP. 756-757; BIBL. 8 REF.Serial Issue

NUMERICAL ANALYSIS OF BACK-SURFACE-FIELD SILICON SOLAR CELLS. = ANALYSE NUMERIQUE DE CELLULES SOLAIRES AU SILICIUM A CHAMP INTEGRE DANS LA SURFACE ARRIEREFOSSUM JG.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 339-342; BIBL. 8 REF.Conference Paper

LIMITATIONS ON THE OPEN-CIRCUIT VOLTAGE IMPOSED BY P⁺ AND N⁺ REGIONS IN SILICON SOLAR CELLSSHIBIB MA; FOSSUM JG.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 2; PP. 1072-1075; BIBL. 16 REF.Article

PICTORIAL DERIVATION OF THE INFLUENCE OF DEGENERACY AND DISORDER ON NONDEGENERATE MINORITY-CARRIER CONCENTRATION AND RECOMBINATION CURRENT IN HEAVILY DOPED SILICONLINDHOLM FA; FOSSUM JG.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 9; PP. 230-234; BIBL. 31 REF.Article

REVIEW OF PHYSICS UNDERLYING RECENT IMPROVEMENTS IN SILICON SOLAR-CELL PERFORMANCELINDHOLM FA; FOSSUM JG.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 680-683; BIBL. 20 REF.Conference Paper

THEORY OF GRAIN-BOUNDARY AND INTRAGRAIN RECOMBINATION CURRENTS IN POLYSILICON P-N-JUNCTION SOLAR CELLSFOSSUM JG; LINDHOLM FA.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 4; PP. 692-700; BIBL. 17 REF.Article

CMOS OPTIMIZATION FOR RADIATION HARDNESS.DERBENWICK GF; FOSSUM JG.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 433-436; BIBL. 8 REF.Conference Paper

HIGH EFFICIENCY P⁺-N-N⁺ BACK-SURFACE-FIELD SILICON SOLAR CELLSFOSSUM JG; BURGESS EL.1978; APPL. PHYS. LETTERS.; USA; DA. 1978; VOL. 33; NO 3; PP. 238-240; BIBL. 9 REF.Article

THE DEPENDENCE OF OPEN-CIRCUIT VOLTAGE ON ILLUMINATION LEVEL IN P-N JUNCTION SOLAR CELLS.FOSSUM JG; LINDHOLM FA.1977; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 4; PP. 325-329; BIBL. 7 REF.Article

SYSTEMATIC COMPTUTER-AIDED MULTIDIMENSIONAL MODELING OF INTEGRATED BIPOLAR DEVICESFOSSUM JG; HAMILTON DJ.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 1; PP. 1-14; BIBL. 13 REF.Serial Issue

ANALYSIS OF MINORITY-CARRIER TRANSPORT IN POLYSILICON DEVICESFOSSUM JG; RAVISHANKAR SUNDARESAN.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 8; PP. 1185-1197; BIBL. 25 REF.Article

P⁺-N-N⁺ SOLAR CELLS WITH HOLE DIFFUSION LENGTHS COMPARABLE WITH THE BASE WIDTH: A SIMPLE ANALYTIC MODELKOUSIK GS; FOSSUM JG.1981; SOL. CELLS; ISSN 0379-6787; CHE; DA. 1981; VOL. 5; NO 1; PP. 75-79; BIBL. 4 REF.Article

CHARACTERIZATION OF P⁺ NN⁺ BSF SILICON CONCENTRATOR SOLAR CELLSNASBY RD; FOSSUM JG.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 419-422; BIBL. 8 REF.Conference Paper

PERFORMANCE OF N⁺-P SILICON SOLAR CELLS IN CONCENTRATED SUNLIGHT.BURGESS EL; FOSSUM JG.1977; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 4; PP. 433-438; BIBL. 14 REF.Article

SILICON SOLAR CELL DEVELOPMENT FOR CONCENTRATED-SUNLIGHT, HIGH-TEMPERATURE APPLICATIONS.FOSSUM JG; BURGESS EL.1976; IN: PHOTOVOLTAIC SPEC. CONF. 12; BATON ROUGE, LA.; 1976; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1976; PP. 737-743; BIBL. 12 REF.Conference Paper

AN ANALYTIC CHARACTERIZATION OF WEAK-INVERSION DRIFT CURRENT IN A LONG-CHANNEL MOSFETLIM HK; FOSSUM JG.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 713-715; BIBL. 5 REF.Article

A PHYSICAL MODEL FOR THE DEPENDENCE OF CARRIER LIFETIME ON DOPING DENSITY IN NONDEGENERATE SILICONFOSSUM JG; LEE DS.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 8; PP. 741-747; BIBL. 21 REF.Article

EFFECTS ON THE OPEN-CIRCUIT VOLTAGE OF GRAIN BOUNDARIES WITHIN THE JUNCTION SPACE-CHARGE REGION OF POLYCRYSTALLINE SOLAR CELLSFOSSUM JG; LINHOLM FA.1980; IEEE ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 12; PP. 267-269; BIBL. 12 REF.Article

AN ANALYTIC MODEL FOR MINORITY-CARRIER TRANSPORT IN HEAVILY DOPED REGIONS OF SILICAN DEVICESFOSSUM JG; AYMAN SHIBIB M.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 9; PP. 1018-1025; BIBL. 22 REF.Article

IMPROVEMENT OF POLYSILICON SOLAR CELLS BY ALUMINUM DIFFUSIONSUNDARESAN R; BURK DE; FOSSUM JG et al.1982; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 16/1982-09-27/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1982; PP. 421-426; BIBL. 21 REF.Conference Paper

APPLICATION OF THE SUPERPOSITION PRINCIPLE TO SOLAR-CELL ANALYSISLINDHOLM FA; FOSSUM JG; BURGESS EL et al.1979; I.E.E.E. TRANS. ELECTRON. DEVICES; USA; DA. 1979; VOL. 26; NO 3; PP. 165-171; BIBL. 21 REF.Article

PHYSICS UNDERLYING THE PERFORMANCE OF BACK-SURFACE-FIELD SOLAR CELLSFOSSUM JG; NASBY RD; SHING CHONG PAO et al.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 4; PP. 785-791; BIBL. 17 REF.Article